General Description： The GL50N03A3 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. The package form is TO-251, which accords with the RoHS standard.
Features： Fast Switching Low Gate Charge and Rdson Low Reverse transfer capacitances 100% Single Pulse avalanche energy Test
Applications： Power switching application Hard switched and high frequency circuits Uninterruptible power supply |  |
Absolute（Tc=25℃ unless otherwise specified）：
Symbol | Parameter | Rating | Units |
VDSS | Drain-to-Source Voltage | 30 | V |
ID | Continuous Drain Current | 50 | A |
| Continuous Drain Current TC = 100 °C | 35 | A |
IDM | Pulsed Drain Current | 200 | A |
VGS | Gate-to-Source Voltage | ±20 | V |
EAS a2 | Single Pulse Avalanche Energy | 70 | mJ |
EAR a1 | Avalanche Energy ,Repetitive | 15 | mJ |
IAR a1 | Avalanche Current | 30 | A |
dv/dt a3 | Peak Diode Recovery dv/dt | 5.0 | V/ns |
PD | Power Dissipation | 60 | W |
TJ，Tstg | Operating Junction and Storage Temperature Range | 175，–55 to 175 | ℃ |
TL | Maximum Temperature for Soldering | 300 | ℃ |
Electrical Characteristics（Tc=25℃ unless otherwise specified）：
OFF Characteristics |
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Symbol | Parameter | Test Conditions | Rating | Units |
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| Min. | Typ. | Max. |
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VDSS | Drain to Source Breakdown Voltage | VGS=0V, ID=250µA | 30 | -- | -- | V |
ΔBVDSS/ΔTJ | Bvdss Temperature Coefficient | ID=250uA,Reference25℃ | -- | 0.1 | -- | V/℃ |
IDSS | Drain to Source Leakage Current | VDS=30V,VGS=0V,Ta=25℃ | -- | -- | 1 | µA |
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| VDS=24V,VGS=0V,Ta=125℃ | -- | -- | 250 |
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IGSS(F) | Gate to Source Forward Leakage | VGS=+20V | -- | -- | 1 | µA |
IGSS(R) | Gate to Source Reverse Leakage | VGS=-20V | -- | -- | -1 | µA |
ON Characteristics |
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Symbol | Parameter | Test Conditions | Rating | Units |
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RDS(ON) | Drain-to-Source On-Resistance | VGS=10V,ID=25A | -- | 8 | 11 | mΩ |
VGS(TH) | Gate Threshold Voltage | VDS=VGS,ID=250µA | 1.0 | 1.6 | 2.0 | V |
Pulse width tp≤380µs,δ≤2% |
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Dynamic Characteristics |
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Symbol | Parameter | Test Conditions | Rating | Units |
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| Min. | Typ. | Max. |
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gfs | Forward Transconductance | VDS=5V,ID=25A | 15 | -- | -- | S |
Ciss | Input Capacitance | VGS=0V,VDS=15V f=1.0MHz | -- | 1800 | -- | pF |
Coss | Output Capacitance |
| -- | 240 | -- |
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Crss | Reverse Transfer Capacitance |
| -- | 180 | -- |
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Resistive Switching Characteristics |
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Symbol | Parameter | Test Conditions | Rating | Units |
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| Min. | Typ. | Max. |
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td(ON) | Turn-on Delay Time | ID=25A,VDD=15V VGS=10V,RG=3.0Ω | -- | 10 | -- | ns |
tr | Rise Time |
| -- | 9 | -- |
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td(OFF) | Turn-Off Delay Time |
| -- | 30 | -- |
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tf | Fall Time |
| -- | 6 | -- |
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Qg | Total Gate Charge | ID =25A,VDD=15V VGS=10V | -- | 23 | -- | nC |
Qgs | Gate to Source Charge |
| -- | 8 | -- |
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Qgd | Gate to Drain (“Miller”)Charge |
| -- | 4.5 | -- |
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Source-Drain Diode Characteristics |
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Symbol | Parameter | Test Conditions | Rating | Units |
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IS | Continuous Source Current (Body Diode) |
| -- | -- | 50 | A |
ISM | Maximum Pulsed Current (Body Diode) |
| -- | -- | 200 | A |
VSD | Diode Forward Voltage | IS=50A,VGS=0V | -- | -- | 1.5 | V |
trr | Reverse Recovery Time | IS=50A,Tj=25°C dIF/dt=100A/us,VGS=0V | -- | 30 | -- | ns |
Qrr | Reverse Recovery Charge |
| -- | 35 | -- | nC |
Pulse width tp≤380µs,δ≤2% |
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Symbol | Parameter | Typ. | Units |
RθJA | Junction-to-Ambient | 2.5 | ℃/W |
a1：Repetitive rating; pulse width limited by maximum junction temperature
a2：EAS condition : Tj=25 ,VDD= ℃ 30V,VG=10V,L=0.5mH,Rg=25Ω
a3：ISD =50A,di/dt ≤100A/us,VDD≤BVDS, Start TJ=25℃
Company：Wuxi Guang Lei electronic technology co., LTD
TEL：13961734102 Mr.yuan
