General Description： GL47J60AN the silicon N-channel Enhanced VDMOSFETS, is obtained by the self-aligned Superjunction Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-3P(N), which accords with the RoHS standard.
Features： Proprietary New Super-Junction Technology RDS(ON).typ.=0.08Ω Low Gate Charge Minimize Switching Loss 100% Single Pulse avalanche energy Test
Applications： Adaptor Charger SMPS Standby Power Switching Voltage Regulators |  |
Absolute（Tc=25℃unless otherwise specified）：
Symbol | Parameter | Rating | Units |
VDSS | Drain-to-Source Voltage | 600 | V |
ID | Continuous Drain Current | 47 | A |
IDM | Pulsed Drain Current | 140 | A |
VGS | Gate-to-Source Voltage | ±30 | V |
EAS | Single Pulse Avalanche Energy | 1100 | mJ |
PD | Power Dissipation | 400 | W |
| Derating Factor above 25°C | 3.23 | W/℃ |
TJ，Tstg | Operating Junction and Storage Temperature Range | 150，–55 to 150 | ℃ |
TL | MaximumTemperature for Soldering | 300 | ℃ |
Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device.
Electrical Characteristics（Tc= 25℃ unless otherwise specified）：
OFF Characteristics |
|
|
|
|
|
|
Symbol | Parameter | Test Conditions | Rating | Units |
|
|
|
|
| Min. | Typ. | Max. |
|
VDSS | Drain to Source Breakdown Voltage | VGS=0V,ID=250µA | 600 | -- | -- | V |
IDSS | Drain to Source Leakage Current | VDS=600V, VGS=0V,Ta=25℃ | -- | -- | 1 | µA |
|
| VDS=480V, VGS=0V,Ta=125℃ | -- | -- | 100 |
|
IGSS(F) | Gate to Source Forward Leakage | VGS=+30V | -- | -- | 10 | µA |
IGSS(R) | Gate to Source Reverse Leakage | VGS=-30V | -- | -- | -10 | µA |
ON Characteristics |
|
|
|
|
|
|
Symbol | Parameter | Test Conditions | Rating | Units |
|
|
|
|
| Min. | Typ. | Max. |
|
RDS(ON) | Drain-to-Source On-Resistance | VGS=10V,ID=20A | -- | 80 | 95 | mΩ |
VGS(TH) | Gate Threshold Voltage | VDS=VGS, ID=250µA | 2.0 | -- | 4.0 | V |
gfs | Forward Transconductance | VDS=10V, ID=47A | -- | 40 | -- | S |
Pulse width tp≤380µs,δ≤2% |
|
|
|
|
|
|
Dynamic Characteristics |
|
|
|
|
|
|
Symbol | Parameter | Test Conditions | Rating | Units |
|
|
|
|
| Min. | Typ. | Max. |
|
Ciss | Input Capacitance | VGS= 0V VDS=50V f=1.0MHz | -- | 4300 | -- | pF |
Coss | Output Capacitance |
| -- | 30 | -- |
|
Crss | Reverse Transfer Capacitance |
| -- | 400 | -- |
|
Qg | Total Gate Charge | ID=47A,VDD=480V VGS=0 to 10V | -- | 115 | -- | nc |
Qgs | Gate to Source Charge |
| -- | 19 | -- | nc |
Qgd | Gate to Drain (“Miller”)Charge |
| -- | 40 | -- | nc |
Resistive Switching Characteristics |
|
|
|
|
|
|
Symbol | Parameter | Test Conditions | Rating | Units |
|
|
|
|
| Min. | Typ. | Max. |
|
td(ON) | Turn-on Delay Time | VDD=300V,ID=47A, VGS=10V Rg=25Ω | -- | 96 | -- | nS |
tr | Rise Time |
| -- | 216 | -- |
|
td(OFF) | Turn-Off Delay Time |
| -- | 352 | -- |
|
tf | Fall Time |
| -- | 100 | -- |
|
Source-Drain Diode Characteristics |
|
|
|
|
|
|
Symbol | Parameter | Test Conditions | Rating | Units |
|
|
|
|
| Min. | Typ. | Max. |
|
IS | Continuous Source Current (Body Diode) |
| -- | -- | 47 | A |
ISM | Maximum Pulsed Current(Body Diode) |
| -- | -- | 140 | A |
VSD | Diode Forward Voltage | IS=47A,VGS=0V | -- | -- | 1.5 | V |
trr | Reverse Recovery Time | VR=480V, IF=IS, diF/dt=100A/us,VGS=0V | -- | 520 | -- | ns |
Qrr | Reverse Recovery Charge |
| -- | 13 | -- | uC |
Pulse width tp≤380µs,δ≤2% |
|
|
|
|
|
|
Symbol | Parameter | Max. | Units |
RθJC | Junction-to-Case | 0.31 | ℃/W |
RθJA | Junction-to-Ambient | 55 | ℃/W |
TJ=+25℃ to +150℃
Pulse width≤380µs; duty cycle≤2%.
Characteristics Curve 
Company：Wuxi Guang Lei electronic technology co., LTD
TEL：13961734102Mr.yuan
