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GL4606-D8(低开启）

Package：

SOP-8

产品详情

General Description：

The GL4606-D8 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. The package form is SOP-8, which accords with the RoHS standard.

Features：

N-Channel

VDS = 30V,ID = 8A

RDS(ON) <20mΩ @ VGS=10V

RDS(ON) < 30mΩ @ VGS=4.5V

RDS(ON) < 40mΩ @ VGS=2.5V

● P-Channel

VDS = -30V,ID = -8.0A

RDS(ON) < 30mΩ @ VGS=-10V

RDS(ON) < 50mΩ @ VGS=-4.5V

RDS(ON) < 65mΩ @ VGS=-2.5V

Low On-Resistance

Low Input Capacitance

Fast Switching Speed

Low Input/Output Leakage

Absolute Maximum Ratings (T_A=25℃unless otherwise noted)

Parameter	Symbol	N-Channel	P-Channel	Unit
Drain-Source Voltage	VDS	30	-30	V
Gate-Source Voltage	VGS	±20	±20	V
Continuous Drain Current	T_A=25℃	I_D	8	-8	A
	T_A=70℃		7.2	-7.2
Pulsed Drain Current^{(Note 1)}	IDM	32	-32	A
Maximum Power Dissipation	T_A=25℃	P_D	2.0	2.0	W
Operating Junction and Storage Temperature Range	TJ,TSTG	-55 To 150	-55 To 150	℃

Thermal Characteristic

Thermal Resistance,Junction-to-Ambient ^(Note2)	RθJA	N-Ch	62.5	℃/W
Thermal Resistance,Junction-to-Ambient ^(Note2)	RθJA	P-Ch	62.5	℃/W

N-CH Electrical Characteristics (T_A=25℃unless otherwise noted)

Parameter	Symbol	Condition	Min	Typ	Max	Unit
Off Characteristics
Drain-Source Breakdown Voltage	BV_DSS	V_GS=0V I_D=250μA	30	33	-	V
Zero Gate Voltage Drain Current	IDSS	V_DS=30V,V_GS=0V	-	-	1	μA
Gate-Body Leakage Current	IGSS	V_GS=±20V,V_DS=0V	-	-	±1	μA
On Characteristics ^{(Note 3)}
Gate Threshold Voltage	VGS(th)	V_DS=V_GS,I_D=250μA	0.6	1.0	2.5	V
Drain-Source On-State Resistance	RDS(ON)	V_GS=10V, I_D=6A	-	14	20	mΩ
Drain-Source On-State Resistance	RDS(ON)	V_GS=4.5V, I_D=5A	-	21	30	mΩ
Drain-Source On-State Resistance	RDS(ON)	V_GS=2.5V, I_D=4A	-	30	40	mΩ
Forward Transconductance	gFS	V_DS=5V,I_D=8A	15	-	-	S
Dynamic Characteristics^(Note4)
Input Capacitance	C_lss	V_DS=15V,V_GS=0V, F=1.0MHz	-	320	-	PF
Output Capacitance	Coss		-	54	-	PF
Reverse Transfer Capacitance	C_rss		-	41	-	PF
Switching Characteristics ^{(Note 4)}
Turn-on Delay Time	td(on)	V_DD=15V, R_L=2.5Ω V_GS=10V,R_GEN=3Ω	-	5.5	-	nS
Turn-on Rise Time	t_r		-	3.0	-	nS
Turn-Off Delay Time	td(off)		-	16.5	-	nS
Turn-Off Fall Time	t_f		-	4.5	-	nS
Total Gate Charge	Q_g	V_DS=15V,I_D=8A, V_GS=10V	-	15	-	nC
Gate-Source Charge	Q_gs		-	6.5	-	nC
Gate-Drain Charge	Q_gd		-	4.5	-	nC
Drain-Source Diode Characteristics
Diode Forward Voltage^{(Note 3)}	VSD	V_GS=0V,I_S=8A	-	0.8	1.2	V

P-CH Electrical Characteristics (T_A=25℃unless otherwise noted)

Parameter	Symbol	Condition	Min	Typ	Max	Unit
Off Characteristics
Drain-Source Breakdown Voltage	BV_DSS	V_GS=0V I_D=-250μA	-30	-33	-	V
Zero Gate Voltage Drain Current	IDSS	V_DS=-30V,V_GS=0V	-	-	-1	μA
Gate-Body Leakage Current	IGSS	V_GS=±20V,V_DS=0V	-	-	-1	μA
On Characteristics ^{(Note 3)}
Gate Threshold Voltage	VGS(th)	V_DS=V_GS,I_D=-250μA	-0.6	-1.0	-2.5	V
Drain-Source On-State Resistance	RDS(ON)	V_GS=-10V, I_D=-6.0 A	-	22	30	mΩ
Drain-Source On-State Resistance	RDS(ON)	V_GS=-4.5V, I_D=-5.0A	-	30	50	mΩ
Drain-Source On-State Resistance	RDS(ON)	V_GS=-2.5V, I_D=-4.0A	-	45	60	mΩ
Forward Transconductance	gFS	V_DS=-5V,I_D=-8A	10	-	-	S
Dynamic Characteristics^(Note4)
Input Capacitance	C_lss	V_DS=-15V,V_GS=0V, F=1.0MHz	-	630	-	PF
Output Capacitance	Coss		-	110	-	PF
Reverse Transfer Capacitance	C_rss		-	76	-	PF
Switching Characteristics^{(Note 4)}
Turn-on Delay Time	td(on)	V_DD=-15V, R_L=2.3Ω V_GS=-10V,R_GEN=6Ω	-	8.5	-	nS
Turn-on Rise Time	t_r		-	6.5	-	nS
Turn-Off Delay Time	td(off)		-	21	-	nS
Turn-Off Fall Time	t_f		-	8.5	-	nS
Total Gate Charge	Q_g	V_DS=-15V,I_D=-8A V_GS=-10V	-	10.2	-	nC
Gate-Source Charge	Q_gs		-	1.9	-	nC
Gate-Drain Charge	Q_gd		-	2.4	-	nC
Drain-Source Diode Characteristics
Diode Forward Voltage ^{(Note 3)}	VSD	V_GS=0V,I_S=-8A	-	-	-1.2	V

Notes:

Repetitive Rating: Pulse width limited by maximum junction temperature.

Surface Mounted on FR4 Board, t ≤ 10 sec.

Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

Guaranteed by design, not subject to production

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GL4606-D8(低开启）

Absolute Maximum Ratings (TA=25℃unless otherwise noted)

Thermal Characteristic

N-CH Electrical Characteristics (TA=25℃unless otherwise noted)

P-CH Electrical Characteristics (TA=25℃unless otherwise noted)

Absolute Maximum Ratings (T_A=25℃unless otherwise noted)

N-CH Electrical Characteristics (T_A=25℃unless otherwise noted)

P-CH Electrical Characteristics (T_A=25℃unless otherwise noted)