General Description： GL10N80AN, the silicon N-channel Enhanced VDMOSFET, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-3P(N), which accords with the RoHS standard.
Features： Fast Switching Low ON Resistance(Rdson≤1.15Ω) Low Gate Charge (Typical Data:65nC) Low Reverse transfer capacitances(Typical:25pF) 100% Single Pulse avalanche energy Test
Applications: Power switch circuit of adaptor and charger |  |
Absolute（Tc=25℃ unless otherwise specified）：
Symbol | Parameter | Rating | Units |
VDSS | Drain-to-Source Voltage | 800 | V |
ID | Continuous Drain Current | 10 | A |
| Continuous Drain Current TC=100 °C | 7 | A |
IDMa1 | Pulsed Drain Current | 40 | A |
VGS | Gate-to-Source Voltage | ±30 | V |
EAsa2 | Single Pulse Avalanche Energy | 800 | mJ |
dv/dta3 | Peak Diode Recovery dv/dt | 5.0 | V/ns |
PD | Power Dissipation | 160 | W |
| Derating Factor above 25°C | 1.28 | W/℃ |
TJ，Tstg | Operating Junction and Storage Temperature Range | 150，–55 to 150 | ℃ |
TL | Maximum Temperature for Soldering | 300 | ℃ |
Caution Stresses greater than those in the “Absolute Maximum Ratings” may cause permanent damage to the device
Thermal Characteristics
Symbol | Parameter | Rating | Units |
RθJC | Thermal Resistance, Junction-to-Case | 0.78 | ℃/ W |
RθJA | Thermal Resistance, Junction-to-Ambient | 55 | ℃/ W |
Electrical Characteristics（Tc= 25℃ unless otherwise specified）：
OFF Characteristics |
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Symbol | Parameter | Test Conditions | Rating | Units |
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| Min. | Typ. | Max. |
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VDSS | Drain to Source Breakdown Voltage | VGS=0V,ID=250µA | 800 | -- | -- | V |
ΔBVDSS/ΔTJ | Bvdss Temperature Coefficient | ID=250uA,Reference25℃ | -- | 0.55 | -- | V/℃ |
IDSS | Drain to Source Leakage Current | VDS=800V, VGS=0V,Ta=25℃ | -- | -- | 1.0 | µA |
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| VDS=640V, VGS=0V,Ta=125℃ | -- | -- | 100 |
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IGSS(F) | Gate to Source Forward Leakage | VGS=+30V | -- | -- | 100 | nA |
IGSS(R) | Gate to Source Reverse Leakage | VGS=-30V | -- | -- | -100 | nA |
ON Characteristics |
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Symbol | Parameter | Test Conditions | Rating | Units |
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| Min. | Typ. | Max. |
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RDS(ON) | Drain-to-Source On-Resistance | VGS=10V,ID=4A | -- | 1.0 | 1.15 | Ω |
VGS(TH) | Gate Threshold Voltage | VDS=VGS,ID=250µA | 2.0 | -- | 4.0 | V |
gfs | Forward Trans conductance | VDS=20V,ID=10A | -- | 20 | -- | S |
Pulse width<380μs; duty cycle<2%. |
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Dynamic Characteristics |
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Symbol | Parameter | Test Conditions | Rating | Units |
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| Min. | Typ. | Max. |
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Ciss | Input Capacitance | VGS=0V VDS=25V f=1.0MHz | -- | 2900 | -- | pF |
Coss | Output Capacitance |
| -- | 200 | -- |
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Crss | Reverse Transfer Capacitance |
| -- | 25 | -- |
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Resistive Switching Characteristics |
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Symbol | Parameter | Test Conditions | Rating | Units |
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| Min. | Typ. | Max. |
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td(ON) | Turn-on Delay Time | ID=10A,VDD=400V VGS=10V,Rg=4.7Ω | -- | 19 | -- | ns |
tr | Rise Time |
| -- | 10 | -- |
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td(OFF) | Turn-Off Delay Time |
| -- | 68 | -- |
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tf | Fall Time |
| -- | 23 | -- |
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Qg | Total Gate Charge | ID=10A,VDD=640V VGS=10V | -- | 65 | -- | nC |
Qgs | Gate to Source Charge |
| -- | 13 | -- |
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Qgd | Gate to Drain (“Miller”)Charge |
| -- | 25 | -- |
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Source-Drain Diode Characteristics |
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Symbol | Parameter | Test Conditions | Rating | Units |
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| Min. | Typ. | Max. |
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ISD | Continuous Source Current (Body Diode) |
| -- | -- | 10 | A |
ISM | Maximum Pulsed Current (Body Diode) |
| -- | -- | 40 | A |
VSD | Diode Forward Voltage | IS=10A,VGS=0V | -- | -- | 1.5 | V |
trr | Reverse Recovery Time | IS=10A,Tj=25℃ dIF/dt=100A/μs,VGS=0V | -- | 200 | -- | ns |
Qrr | Reverse Recovery Charge |
| -- | 2.2 | -- | μC |
a1：Repetitive rating; pulse width limited by maximum junction temperature
a2：L=10mH, ID=11.4A, Start TJ=25℃
a3：ISD=10A,di/dt ≤100A/us,VDD≤BVDS, Start TJ=25℃
Characteristics Curve：
Company：Wuxi Guang Lei electronic technology co., LTD
TEL：13961734102Mr.yuan
