General Description： GL2N65A3 the silicon N-channel Enhanced VDMOSFETS, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-251, which accords with the RoHS standard.
Features： Fast Switching Low Gate Charge and Rdson Low Reverse transfer capacitances 100% Single Pulse avalanche energy Test
Applications： Power switch circuit of adaptor and charger. |  |
Absolute（Tc=25℃ unless otherwise specified）：
Symbol | Parameter | Rating | Units |
VDSS | Drain-to-Source Voltage | 650 | V |
ID | Continuous Drain Current | 2.0 | A |
| Continuous Drain Current TC = 100 °C | 1.45 | A |
IDMa1 | Pulsed Drain Current | 8.0 | A |
VGS | Gate-to-Source Voltage | ±30 | V |
EAS a2 | Single Pulse Avalanche Energy | 68 | mJ |
EAR a1 | Avalanche Energy ,Repetitive | 6.4 | mJ |
IAR a1 | Avalanche Current | 1.1 | A |
dv/dt a3 | Peak Diode Recovery dv/dt | 5.0 | V/ns |
PD | Power Dissipation | 35 | W |
| Derating Factor above 25°C | 0.28 | W/℃ |
TJ，Tstg | Operating Junction and Storage Temperature Range | 150，–55 to 150 | ℃ |
TL | Maximum Temperature for Soldering | 300 | ℃ |
Electrical Characteristics（Tc=25℃ unless otherwise specified）：
OFF Characteristics |
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Symbol | Parameter | Test Conditions | Rating | Units |
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| Min. | Typ. | Max. |
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VDSS | Drain to Source Breakdown Voltage | VGS=0V, ID=250µA | 650 | -- | -- | V |
ΔBVDSS/ΔTJ | Bvdss Temperature Coefficient | ID=250uA,Reference25℃ | -- | 0.60 | -- | V/℃ |
IDSS | Drain to Source Leakage Current | VDS=650V,VGS=0V,Ta=25℃ | -- | -- | 1 | µA |
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| VDS=520V,VGS=0V,Ta=125℃ | -- | -- | 100 |
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IGSS(F) | Gate to Source Forward Leakage | VGS=+30V | -- | -- | 100 | nA |
IGSS(R) | Gate to Source Reverse Leakage | VGS=-30V | -- | -- | -100 | nA |
ON Characteristics |
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Symbol | Parameter | Test Conditions | Rating | Units |
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RDS(ON) | Drain-to-Source On-Resistance | VGS=10V,ID=1.0A | -- | 3.6 | 4.5 | Ω |
VGS(TH) | Gate Threshold Voltage | VDS=VGS,ID=250µA | 2.0 | -- | 4.0 | V |
Pulse width tp≤380µs,δ≤2% |
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Dynamic Characteristics |
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Symbol | Parameter | Test Conditions | Rating | Units |
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| Min. | Typ. | Max. |
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gfs | Forward Transconductance | VDS=15V,ID=2A | -- | 2.6 | -- | S |
Ciss | Input Capacitance | VGS=0V,VDS=25V f=1.0MHz | -- | 290 | -- | pF |
Coss | Output Capacitance |
| -- | 31 | -- |
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Crss | Reverse Transfer Capacitance |
| -- | 6 | -- |
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Resistive Switching Characteristics |
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Symbol | Parameter | Test Conditions | Rating | Units |
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| Min. | Typ. | Max. |
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td(ON) | Turn-on Delay Time | ID=2.0A,VDD=325V VGS=10V,RG=9.1Ω | -- | 8 | -- | ns |
tr | Rise Time |
| -- | 6 | -- |
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td(OFF) | Turn-Off Delay Time |
| -- | 30 | -- |
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tf | Fall Time |
| -- | 11 | -- |
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Qg | Total Gate Charge | ID =2.0A,VDD=325V VGS=10V | -- | 9 | -- | nC |
Qgs | Gate to Source Charge |
| -- | 1.5 | -- |
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Qgd | Gate to Drain (“Miller”)Charge |
| -- | 4.0 | -- |
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Source-Drain Diode Characteristics |
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Symbol | Parameter | Test Conditions | Rating | Units |
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| Min. | Typ. | Max. |
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IS | Continuous Source Current (Body Diode) |
| -- | -- | 2 | A |
ISM | Maximum Pulsed Current (Body Diode) |
| -- | -- | 8 | A |
VSD | Diode Forward Voltage | IS=2.0A,VGS=0V | -- | -- | 1.5 | V |
trr | Reverse Recovery Time | IS=2.0A,Tj=25°C dIF/dt=100A/us,VGS=0V | -- | 425 | -- | ns |
Qrr | Reverse Recovery Charge |
| -- | 1140 | -- | nC |
Pulse width tp≤380µs,δ≤2% |
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Symbol | Parameter | Typ. | Units |
RθJC | Junction-to-Case | 3.57 | ℃/W |
RθJA | Junction-to-Ambient | 62 | ℃/W |
a1：Repetitive rating; pulse width limited by maximum junction temperature
a2：L=10.0mH, ID=3.7A, Start TJ=25℃
a3：ISD =2A, di/dt≤100A/us, VDD≤BVDS, Start TJ=25℃
Company：Wuxi Guang Lei electronic technology co., LTD
TEL：13961734102 Mr.yuan
