General Description： GL5N20B3 the silicon N-channel Enhanced VDMOSFETS, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-251, which accords with the RoHS standard.
Features： Fast Switching Low Gate Charge Low Reverse transfer capacitances 100% Single Pulse avalanche energy Test
Applications： LED Lighting Charger Standby Power |  |
Absolute（Tc=25℃ unless otherwise specified）：
Symbol | Parameter | Rating | Units |
VDSS | Drain-to-Source Voltage | 200 | V |
ID | Continuous Drain Current | 5 | A |
| Continuous Drain Current TC = 100 °C | 3.5 | A |
IDMa1 | Pulsed Drain Current | 20 | A |
VGS | Gate-to-Source Voltage | ±20 | V |
EAS a2 | Single Pulse Avalanche Energy | 30 | mJ |
dv/dt a3 | Peak Diode Recovery dv/dt | 5.0 | V/ns |
PD | Power Dissipation | 40 | W |
| Derating Factor above 25°C | 0.6 | W/℃ |
TJ，Tstg | Operating Junction and Storage Temperature Range | 150，–55 to 150 | ℃ |
TL | Maximum Temperature for Soldering | 300 | ℃ |
Electrical Characteristics（Tc=25℃ unless otherwise specified）：
OFF Characteristics |
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Symbol | Parameter | Test Conditions | Rating | Units |
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| Min. | Typ. | Max. |
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VDSS | Drain to Source Breakdown Voltage | VGS=0V, ID=250µA | 200 | -- | -- | V |
ΔBVDSS/ΔTJ | Bvdss Temperature Coefficient | ID=250uA,Reference25℃ | -- | 0.21 | -- | V/℃ |
IDSS | Drain to Source Leakage Current | VDS=200V, VGS=0V,Ta=25℃ | -- | -- | 1 | µA |
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| VDS=160V, VGS=0V,Ta=125℃ | -- | -- | 100 |
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IGSS(F) | Gate to Source Forward Leakage | VGS=+30V | -- | -- | 100 | µA |
IGSS(R) | Gate to Source Reverse Leakage | VGS=-30V | -- | -- | -100 | µA |
ON Characteristics |
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Symbol | Parameter | Test Conditions | Rating | Units |
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RDS(ON) | Drain-to-Source On-Resistance | VGS=4.5V,ID=2.5A | -- | 2.5 | 3.0 | Ω |
RDS(ON) | Drain-to-Source On-Resistance | VGS=2.5V,ID=2.5A | -- | 2.6 | 2.0 | Ω |
VGS(TH) | Gate Threshold Voltage | VDS=VGS, ID=250µA | 0.4 | 0.7 | 1.5 | V |
Pulse width tp≤300µs,δ≤2% |
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Dynamic Characteristics |
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Symbol | Parameter | Test Conditions | Rating | Units |
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| Min. | Typ. | Max. |
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gfs | Forward Transconductance | VDS=25V,ID=2.5A | -- | 1.0 | -- | S |
Ciss | Input Capacitance | VGS=0V,VDS=25V f=1.0MHz | -- | 80 | -- | pF |
Coss | Output Capacitance |
| -- | 6 | -- |
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Crss | Reverse Transfer Capacitance |
| -- | 2 | -- |
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Resistive Switching Characteristics |
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Symbol | Parameter | Test Conditions | Rating | Units |
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| Min. | Typ. | Max. |
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td(ON) | Turn-on Delay Time | ID=5A,VDD=100V RG=10Ω | -- | 2 | -- | ns |
tr | Rise Time |
| -- | 4 | -- |
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td(OFF) | Turn-Off Delay Time |
| -- | 6 | -- |
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tf | Fall Time |
| -- | 3 | -- |
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Qg | Total Gate Charge | ID=5A,VDD=100V VGS=10V | -- | 2 | -- | nC |
Qgs | Gate to Source Charge |
| -- | 1 | -- |
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Qgd | Gate to Drain (“Miller”)Charge |
| -- | 1.2 | -- |
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Source-Drain Diode Characteristics |
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Symbol | Parameter | Test Conditions | Rating | Units |
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| Min. | Typ. | Max. |
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IS | Continuous Source Current (Body Diode) |
| -- | -- | 5 | A |
ISM | Maximum Pulsed Current (Body Diode) |
| -- | -- | 40 | A |
VSD | Diode Forward Voltage | IS=5.0A,VGS=0V | -- | -- | 1.5 | V |
trr | Reverse Recovery Time | IS=5.0A,Tj=25°C dIF/dt=100A/us, VGS=0V | -- | 50 | -- | ns |
Qrr | Reverse Recovery Charge |
| -- | 40 | -- | uC |
IRRM | Reverse Recovery Current |
| -- | 1 | -- | A |
Pulse width tp≤300µs,δ≤2% |
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Symbol | Parameter | Typ. | Units |
RθJC | Junction-to-Case | 3.13 | ℃/W |
RθJA | Junction-to-Ambient | 62.5 | ℃/W |
a1：Repetitive rating; pulse width limited by maximum junction temperature
a2：L=10.0mH, ID=1A, Start TJ=25℃
a3：ISD =5A,di/dt ≤100A/us,VDD≤BVDS, Start TJ=25℃
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Company：Wuxi Guang Lei electronic technology co., LTD
TEL：13961734102Mr.yuan
