General Description： The GL80N10A4 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. The package form is TO-252, which accords with the RoHS standard.
Features： RDS(ON) <8.5mΩ @ VGS=10V (Typ7.2mΩ) High density cell design for ultra low Rdson Fully characterized avalanche voltage and current Excellent package for good heat dissipation
Applications： Power switching application Hard switched and high frequency circuits Uninterruptible power supply |  |
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol | Parameter | Rating | Units |
VDSS | Drain-to-Source Voltage | 100 | V |
ID | Continuous Drain Current | 80 | A |
IDM | Pulsed Drain Current | 320 | A |
VGS | Gate-to-Source Voltage | ±20 | V |
PD | Power Dissipation | 125 | W |
| Derating factor | 0.8 | W/℃ |
EAS | Single pulse avalanche energya5 | 320 | mJ |
TJ，Tstg | Operating Junction and Storage Temperature Range | 175，–55 to 175 | ℃ |
Electrical Characteristics（Tc= 25℃ unless otherwise specified）：
OFF Characteristics |
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Symbol | Parameter | Test Conditions | Rating | Units |
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| Min. | Typ. | Max. |
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VDSS | Drain to Source Breakdown Voltage | VGS=0V, ID=250µA | 100 | -- | -- | V |
IDSS | Drain to Source Leakage Current | VDS=100V, VGS= 0V,Ta=25℃ | -- | -- | 1.0 | µA |
IGSS(F) | Gate to Source Forward Leakage | VGS=+20V | -- | -- | 0.1 | µA |
IGSS(R) | Gate to Source Reverse Leakage | VGS=-20V | -- | -- | -0.1 | µA |
ON Characteristicsa3 |
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Symbol | Parameter | Test Conditions | Rating | Units |
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| Min. | Typ. | Max. |
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RDS(ON) | Drain-to-Source On-Resistance | VGS=10V,ID=40A | -- | 7.2 | 8.5 | mΩ |
VGS(TH) | Gate Threshold Voltage | VDS=VGS,ID=250µA | 1.0 | 1.7 | 2.5 | V |
Pulse width tp≤380µs,δ≤2% |
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Dynamic Characteristicsa4 |
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Symbol | Parameter | Test Conditions | Rating | Units |
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| Min. | Typ. | Max. |
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gfs | Forward Transconductance | VDS=10V,ID=40A | 40 | -- | -- | S |
Ciss | Input Capacitance | VGS=0V,VDS=50V f=1.0MHz | -- | 4200 | -- | pF |
Coss | Output Capacitance |
| -- | 354 | -- |
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Crss | Reverse Transfer Capacitance |
| -- | 23 | -- |
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Resistive Switching Characteristicsa4 |
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Symbol | Parameter | Test Conditions | Rating | Units |
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| Min. | Typ. | Max. |
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td(ON) | Turn-on Delay Time | VDD=50V,ID=40A VGS=10V,RG=4.7Ω | -- | 15 | -- | ns |
tr | Rise Time |
| -- | 10 | -- |
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td(OFF) | Turn-Off Delay Time |
| -- | 41 | -- |
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tf | Fall Time |
| -- | 6 | -- |
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Qg | Total Gate Charge | VDD=50V, ID=40A VGS=10V | -- | 65 | -- | nC |
Qgs | Gate to Source Charge |
| -- | 15.3 | -- |
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Qgd | Gate to Drain (“Miller”)Charge |
| -- | 9 | -- |
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Source-Drain Diode Characteristics |
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Symbol | Parameter | Test Conditions | Rating | Units |
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| Min. | Typ. | Max. |
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IS | Continuous Source Current a2(Body Diode) |
| -- | -- | 80 | A |
VSD | Diode Forward Voltagea3 | IS=80A,VGS=0V | -- | -- | 1.2 | V |
Symbol | Parameter | Typ. | Units |
RθJC | Junction-to-Casea2 | 1.25 | ℃/W |
a1：Repetitive Rating: Pulse width limited by maximum junction temperature.
a2：Surface Mounted on FR4 Board, t≤10sec.
a3：Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%.
a4：Guaranteed by design, not subject to production
a5：EAS condition：Tj=25℃,VDD=50V,VG=10V,L=0.5mH,Rg=25Ω
Test circurt
Characteristics Curve：
