General Description： The GL1S50N06LA4 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. The package form is TO-252, which accords with the RoHS standard.
Features： Fast Switching Low Gate Charge and Rdson Low Reverse transfer capacitances 100% Single Pulse avalanche energy Test
Applications： Power switching application Hard switched and high frequency circuits Uninterruptible power supply |  |
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol | Parameter | Rating | Units |
VDSS | Drain-to-Source Voltage | 60 | V |
ID | Continuous Drain Current | 50 | A |
| Continuous Drain Current TC = 100 °C | 35 | A |
IDM | Pulsed Drain Current | 200 | A |
VGS | Gate-to-Source Voltage | ±20 | V |
EAS a2 | Single Pulse Avalanche Energy | 300 | mJ |
EAR a1 | Avalanche Energy ,Repetitive | 50 | mJ |
IAR a1 | Avalanche Current | 28 | A |
dv/dt a3 | Peak Diode Recovery dv/dt | 5.0 | V/ns |
PD | Power Dissipation | 85 | W |
TJ，Tstg | Operating Junction and Storage Temperature Range | 175，–55 to 175 | ℃ |
TL | MaximumTemperature for Soldering | 300 | ℃ |
Electrical Characteristics（Tc= 25℃ unless otherwise specified）：
OFF Characteristics |
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Symbol | Parameter | Test Conditions | Rating | Units |
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| Min. | Typ. | Max. |
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VDSS | Drain to Source Breakdown Voltage | VGS=0V, ID=250µA | 60 | -- | -- | V |
ΔBVDSS/ΔTJ | Bvdss Temperature Coefficient | ID=250uA,Reference25℃ | -- | 0.1 | -- | V/℃ |
IDSS | Drain to Source Leakage Current | VDS=60V,VGS=0V,Ta=25℃ | -- | -- | 1 | µA |
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| VDS=48V,VGS=0V,Ta=125℃ | -- | -- | 250 |
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IGSS(F) | Gate to Source Forward Leakage | VGS=+20V | -- | -- | 1 | µA |
IGSS(R) | Gate to Source Reverse Leakage | VGS=-20V | -- | -- | -1 | µA |
ON Characteristics |
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Symbol | Parameter | Test Conditions | Rating | Units |
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| Min. | Typ. | Max. |
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RDS(ON) | Drain-to-Source On-Resistance | VGS=10V,ID=20A | -- | 13.5 | 18 | mΩ |
VGS(TH) | Gate Threshold Voltage | VDS=VGS,ID=250µA | 1.5 | 1.85 | 2.5 | V |
Pulse width tp≤380µs,δ≤2% |
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Dynamic Characteristics |
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Symbol | Parameter | Test Conditions | Rating | Units |
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| Min. | Typ. | Max. |
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gfs | Forward Transconductance | VDS=5V,ID=20A | 18 | -- | -- | S |
Ciss | Input Capacitance | VGS=0V,VDS=30V f=1.0MHz | -- | 2050 | -- | pF |
Coss | Output Capacitance |
| -- | 158 | -- |
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Crss | Reverse Transfer Capacitance |
| -- | 120 | -- |
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Resistive Switching Characteristics |
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Symbol | Parameter | Test Conditions | Rating | Units |
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| Min. | Typ. | Max. |
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td(ON) | Turn-on Delay Time | ID=20A,VDD=30V VGS=10V,RG=3.0Ω | -- | 7.5 | -- | ns |
tr | Rise Time |
| -- | 5.0 | -- |
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td(OFF) | Turn-Off Delay Time |
| -- | 28.0 | -- |
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tf | Fall Time |
| -- | 5.5 | -- |
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Qg | Total Gate Charge | ID=20A,VDD=30V VGS=10V | -- | 50 | -- | nC |
Qgs | Gate to Source Charge |
| -- | 6 | -- |
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Qgd | Gate to Drain (“Miller”)Charge |
| -- | 15 | -- |
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Source-Drain Diode Characteristics |
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Symbol | Parameter | Test Conditions | Rating | Units |
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| Min. | Typ. | Max. |
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IS | Continuous Source Current (Body Diode) |
| -- | -- | 50 | A |
ISM | Maximum Pulsed Current (Body Diode) |
| -- | -- | 200 | A |
VSD | Diode Forward Voltage | IS=50A,VGS=0V | -- | -- | 1.5 | V |
trr | Reverse Recovery Time | IS=20A,Tj = 25°C dIF/dt=100A/us,VGS=0V | -- | 30 | -- | ns |
Qrr | Reverse Recovery Charge |
| -- | 40 | -- | nC |
Pulse width tp≤380µs,δ≤2% |
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Symbol | Parameter | Typ. | Units |
RθJA | Junction-to-Ambient | 1.8 | ℃/W |
a1：Repetitive rating; pulse width limited by maximum junction temperature
a2：EAS condition : Tj=25℃ ,VDD=30V,VG=10V,L=0.5mH,Rg=25Ω
a3：ISD =20A,di/dt ≤100A/us,VDD≤BVDS, Start TJ=25℃
Characteristics Curve：
Company：Wuxi Guang Lei electronic technology co., LTD
TEL：13961734102 Mr.yuan
General Description：
The GL1S50N06LA4 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. The package form is TO-252, which accords with the RoHS standard.
Features：
Fast Switching
Low Gate Charge and Rdson
Low Reverse transfer capacitances
100% Single Pulse avalanche energy Test
Applications：
Power switching application
Hard switched and high frequency circuits
Uninterruptible power supply
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol | Parameter | Rating | Units |
VDSS | Drain-to-Source Voltage | 60 | V |
ID | Continuous Drain Current | 50 | A |
| Continuous Drain Current TC = 100 °C | 35 | A |
IDM | Pulsed Drain Current | 200 | A |
VGS | Gate-to-Source Voltage | ±20 | V |
EAS a2 | Single Pulse Avalanche Energy | 300 | mJ |
EAR a1 | Avalanche Energy ,Repetitive | 50 | mJ |
IAR a1 | Avalanche Current | 28 | A |
dv/dt a3 | Peak Diode Recovery dv/dt | 5.0 | V/ns |
PD | Power Dissipation | 85 | W |
TJ，Tstg | Operating Junction and Storage Temperature Range | 175，–55 to 175 | ℃ |
TL | MaximumTemperature for Soldering | 300 | ℃ |
Electrical Characteristics（Tc= 25℃ unless otherwise specified）：
OFF Characteristics |
|
|
|
|
|
|
Symbol | Parameter | Test Conditions | Rating | Units |
|
|
|
|
| Min. | Typ. | Max. |
|
VDSS | Drain to Source Breakdown Voltage | VGS=0V, ID=250µA | 60 | -- | -- | V |
ΔBVDSS/ΔTJ | Bvdss Temperature Coefficient | ID=250uA,Reference25℃ | -- | 0.1 | -- | V/℃ |
IDSS | Drain to Source Leakage Current | VDS=60V,VGS=0V,Ta=25℃ | -- | -- | 1 | µA |
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| VDS=48V,VGS=0V,Ta=125℃ | -- | -- | 250 |
|
IGSS(F) | Gate to Source Forward Leakage | VGS=+20V | -- | -- | 1 | µA |
IGSS(R) | Gate to Source Reverse Leakage | VGS=-20V | -- | -- | -1 | µA |
ON Characteristics |
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Symbol | Parameter | Test Conditions | Rating | Units |
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| Min. | Typ. | Max. |
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RDS(ON) | Drain-to-Source On-Resistance | VGS=10V,ID=20A | -- | 13.5 | 18 | mΩ |
VGS(TH) | Gate Threshold Voltage | VDS=VGS,ID=250µA | 1.5 | 1.85 | 2.5 | V |
Pulse width tp≤380µs,δ≤2% |
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Dynamic Characteristics |
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|
|
Symbol | Parameter | Test Conditions | Rating | Units |
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| Min. | Typ. | Max. |
|
gfs | Forward Transconductance | VDS=5V,ID=20A | 18 | -- | -- | S |
Ciss | Input Capacitance | VGS=0V,VDS=30V f=1.0MHz | -- | 2050 | -- | pF |
Coss | Output Capacitance |
| -- | 158 | -- |
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Crss | Reverse Transfer Capacitance |
| -- | 120 | -- |
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Resistive Switching Characteristics |
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Symbol | Parameter | Test Conditions | Rating | Units |
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| Min. | Typ. | Max. |
|
td(ON) | Turn-on Delay Time | ID=20A,VDD=30V VGS=10V,RG=3.0Ω | -- | 7.5 | -- | ns |
tr | Rise Time |
| -- | 5.0 | -- |
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td(OFF) | Turn-Off Delay Time |
| -- | 28.0 | -- |
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tf | Fall Time |
| -- | 5.5 | -- |
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Qg | Total Gate Charge | ID=20A,VDD=30V VGS=10V | -- | 50 | -- | nC |
Qgs | Gate to Source Charge |
| -- | 6 | -- |
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Qgd | Gate to Drain (“Miller”)Charge |
| -- | 15 | -- |
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Source-Drain Diode Characteristics |
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|
|
Symbol | Parameter | Test Conditions | Rating | Units |
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|
|
| Min. | Typ. | Max. |
|
IS | Continuous Source Current (Body Diode) |
| -- | -- | 50 | A |
ISM | Maximum Pulsed Current (Body Diode) |
| -- | -- | 200 | A |
VSD | Diode Forward Voltage | IS=50A,VGS=0V | -- | -- | 1.5 | V |
trr | Reverse Recovery Time | IS=20A,Tj = 25°C dIF/dt=100A/us,VGS=0V | -- | 30 | -- | ns |
Qrr | Reverse Recovery Charge |
| -- | 40 | -- | nC |
Pulse width tp≤380µs,δ≤2% |
|
|
|
|
|
|
Symbol | Parameter | Typ. | Units |
RθJA | Junction-to-Ambient | 1.8 | ℃/W |
a1：Repetitive rating; pulse width limited by maximum junction temperature
a2：EAS condition : Tj=25℃ ,VDD=30V,VG=10V,L=0.5mH,Rg=25Ω
a3：ISD =20A,di/dt ≤100A/us,VDD≤BVDS, Start TJ=25℃
Characteristics Curve：
Company：Wuxi Guang Lei electronic technology co., LTD
TEL：13961734102 Mr.yuan
