General Description： The GL290N04A8 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. The package form is TO-220AB, which accords with the RoHS standard.
Features： RDS(ON) <2.3mΩ @ VGS=10V (Typ1.6mΩ) High density cell design for ultra low Rdson Fully characterized avalanche voltage and current Excellent package for good heat dissipation
Applications： Power switching application Hard switched and high frequency circuits Uninterruptible power supply |  |
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol | Parameter | Rating | Units |
VDSS | Drain-to-Source Voltage | 40 | V |
ID | Continuous Drain Current (Silicon Limited) | 290 |
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| Continuous Drain Current(Package Limited) | 80 | A |
IDM | Pulsed Drain Current | 1160 | A |
VGS | Gate-to-Source Voltage | ±20 | V |
PD | Power Dissipation | 250 | W |
EAS | Single pulse avalanche energy | 1300 | mJ |
TJ，Tstg | Operating Junction and Storage Temperature Range | 175，–55 to 175 | ℃ |
Electrical Characteristics（Tc= 25℃ unless otherwise specified）：
OFF Characteristics |
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Symbol | Parameter | Test Conditions | Rating | Units |
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| Min. | Typ. | Max. |
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VDSS | Drain to Source Breakdown Voltage | VGS=0V, ID=250µA | 40 | -- | -- | V |
IDSS | Drain to Source Leakage Current | VDS=32V, VGS= 0V,Ta=25℃ | -- | -- | 1.0 | µA |
IGSS(F) | Gate to Source Forward Leakage | VGS=+20V | -- | -- | 0.1 | µA |
IGSS(R) | Gate to Source Reverse Leakage | VGS=-20V | -- | -- | -0.1 | µA |
ON Characteristicsa3 |
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Symbol | Parameter | Test Conditions | Rating | Units |
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| Min. | Typ. | Max. |
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RDS(ON) | Drain-to-Source On-Resistance | VGS=10V,ID=80A | -- | 1.6 | 2.3 | mΩ |
VGS(TH) | Gate Threshold Voltage | VDS=VGS,ID=250µA | 2.0 | -- | 4.0 | V |
Pulse width tp≤380µs,δ≤2% |
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Dynamic Characteristicsa4 |
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Symbol | Parameter | Test Conditions | Rating | Units |
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| Min. | Typ. | Max. |
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Ciss | Input Capacitance | VGS=0V,VDS=20V f=1.0MHz | -- | 8400 | -- | pF |
Coss | Output Capacitance |
| -- | 1180 | -- |
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Crss | Reverse Transfer Capacitance |
| -- | 630 | -- |
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Resistive Switching Characteristicsa4 |
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Symbol | Parameter | Test Conditions | Rating | Units |
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| Min. | Typ. | Max. |
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td(ON) | Turn-on Delay Time | VDD=20V,ID=80A VGS=10V,RG=1.6Ω,RL=0.5Ω | -- | 30 | -- | ns |
tr | Rise Time |
| -- | 81 | -- |
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td(OFF) | Turn-Off Delay Time |
| -- | 185 | -- |
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tf | Fall Time |
| -- | 91 | -- |
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Qg | Total Gate Charge | VDD=20V, ID=850A VGS=10V | -- | 135 | -- | nC |
Qgs | Gate to Source Charge |
| -- | 36.0 | -- |
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Qgd | Gate to Drain (“Miller”)Charge |
| -- | 23.5 | -- |
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Source-Drain Diode Characteristics |
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Symbol | Parameter | Test Conditions | Rating | Units |
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trr | Reverse Recovery Time | IS=80A,Tj=25℃ dIF/dt=100A/μs,VGS=0V | -- | 70 | -- | ns |
Qrr | Reverse Recovery Charge |
| -- | 67 | -- | μC |
IS | Continuous Source Current a2(Body Diode) |
| -- | -- | 80 | A |
VSD | Diode Forward Voltagea3 | IS=80A,VGS=0V | -- | -- | 1.2 | V |
Symbol | Parameter | Typ. | Units |
RθJC | Junction-to-Casea2 | 0.60 | ℃/W |
a1：Repetitive Rating: Pulse width limited by maximum junction temperature.
a2：Surface Mounted on FR4 Board, t≤10sec.
a3：Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%.
a4：Guaranteed by design, not subject to production
Test circurt
Characteristics Curve：
Company：Wuxi Guang Lei electronic technology co., LTD
TEL：13961734102 Mr.yuan
