General Description： The GL3416 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. The package form is SOT-23, which accords with the RoHS standard. Features： Fast Switching Low Gate Charge and Rdson Low Reverse transfer capacitances 100% Single Pulse avalanche energy Test Applications： PWM applications Load switch Power management |  |
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol | Parameter | Rating | Units |
VDSS | Drain-to-Source Voltage | 20 | V |
ID | Continuous Drain Current | 6.4 | A |
| Continuous Drain Current TC = 70 °C | 5.0 | A |
IDMa1 | Pulsed Drain Current | 30 | A |
VGS | Gate-to-Source Voltage | ±12 | V |
dv/dt a3 | Peak Diode Recovery dv/dt | 5.0 | V/ns |
PD | Power Dissipation | 1.4 | W |
TJ，Tstg | Operating Junction and Storage Temperature Range | 150，–55 to 150 | ℃ |
TL | MaximumTemperature for Soldering | 300 | ℃ |
Electrical Characteristics（Tc= 25℃ unless otherwise specified）：
OFF Characteristics |
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Symbol | Parameter | Test Conditions | Rating | Units |
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| Min. | Typ. | Max. |
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VDSS | Drain to Source Breakdown Voltage | VGS=0V, ID=-250µA | 20 | -- | -- | V |
ΔBVDSS/ΔTJ | Bvdss Temperature Coefficient | ID=-250uA,Reference25℃ | -- | 0.03 | -- | V/℃ |
IDSS | Drain to Source Leakage Current | VDS = 20, VGS= 0V, Ta = 25℃ | -- | -- | 1 | µA |
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| VDS =16V, VGS= 0V, Ta = 125℃ | -- | -- | 250 |
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IGSS(F) | Gate to Source Forward Leakage | VGS =+12V | -- | -- | 1 | µA |
IGSS(R) | Gate to Source Reverse Leakage | VGS =-12V | -- | -- | -1 | µA |
ON Characteristics |
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Symbol | Parameter | Test Conditions | Rating | Units |
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| Min. | Typ. | Max. |
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RDS(ON) | Drain-to-Source On-Resistance | VGS=4.5V,ID=6.5A | -- | 18 | 28 | mΩ |
RDS(ON) | Drain-to-Source On-Resistance | VGS=2.5V,ID=5.5A | -- | 22 | 33 | mΩ |
RDS(ON) | Drain-to-Source On-Resistance | VGS=1.8V,ID=5.0A | -- | 28 | 40 | mΩ |
VGS(TH) | Gate Threshold Voltage | VDS = VGS, ID = 250µA | 0.45 | 0.7 | 1.0 | V |
Pulse width tp≤380µs,δ≤2% |
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Dynamic Characteristics |
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Symbol | Parameter | Test Conditions | Rating | Units |
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| Min. | Typ. | Max. |
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gfs | Forward Transconductance | VDS=5V, ID =6.5A | 8 | -- | -- | S |
Ciss | Input Capacitance | VGS = 0V VDS = 10V f = 1.0MHz | -- | 680 | -- | pF |
Coss | Output Capacitance |
| -- | 180 | -- |
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Crss | Reverse Transfer Capacitance |
| -- | 88 | -- |
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Resistive Switching Characteristics |
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Symbol | Parameter | Test Conditions | Rating | Units |
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| Min. | Typ. | Max. |
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td(ON) | Turn-on Delay Time | ID =6.5A VDD = 10V VGS 5V RG = 6.0Ω | -- | 0.8 | -- | ns |
tr | Rise Time |
| -- | 1.2 | -- |
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td(OFF) | Turn-Off Delay Time |
| -- | 15 | -- |
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tf | Fall Time |
| -- | 4.4 | -- |
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Qg | Total Gate Charge | ID =6.5A VDD =10V VGS =5V | -- | 9 | -- | nC |
Qgs | Gate to Source Charge |
| -- | 2.5 | -- |
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Qgd | Gate to Drain (“Miller”)Charge |
| -- | 3.0 | -- |
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Source-Drain Diode Characteristics |
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Symbol | Parameter | Test Conditions | Rating | Units |
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| Min. | Typ. | Max. |
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IS | Continuous Source Current (Body Diode) |
| -- | -- | 6.5 | A |
ISM | Maximum Pulsed Current (Body Diode) |
| -- | -- | 30 | A |
VSD | Diode Forward Voltage | IS=6.5A,VGS=0V | -- | -- | 1.5 | V |
trr | Reverse Recovery Time | IS=6.5A,Tj = 25°C dIF/dt=100A/us, VGS=0V | -- | 40 | -- | ns |
Qrr | Reverse Recovery Charge |
| -- | 100 | -- | nC |
Pulse width tp≤380µs,δ≤2% |
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Symbol | Parameter | Typ. | Units |
RθJA | Junction-to-Ambient | 89 | ℃/W |
a1：Repetitive rating; pulse width limited by maximum junction temperature
a3：ISD =3.0A,di/dt ≤100A/us,VDD≤BVDS, Start TJ=25℃
