General Description：
GL18J80FA9 the silicon N-channel Enhanced VDMOSFETS, is obtained by the self-aligned Super-junction Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220F, which accords with the RoHS standard.
Features：
Fast Switching
Low Gate Charge and Rdson
Low Reverse transfer capacitances
100% Single Pulse avalanche energy Test
Applications：
Switch Mode Power Supply(SMPS)
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol | Parameter | Rating | Units |
VDSS | Drain-to-Source Voltage | 800 | V |
ID | Continuous Drain Current | 18.4 | A |
IDMa1 | Pulsed Drain Current | 73.6 | A |
VGS | Gate-to-Source Voltage | ±30 | V |
EAS a2 | Single Pulse Avalanche Energy | 50 | mJ |
PD | Power Dissipation | 35 | W |
TJ，Tstg | Operating Junction and Storage Temperature Range | 150，–55 to 150 | ℃ |
TL | MaximumTemperature for Soldering | 300 | ℃ |
Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device.
Thermal Characteristics
Symbol | Parameter | Typ. | Units |
RθJC | Junction-to-Case | 3.7 | ℃/W |
RθJA | Junction-to-Ambient | 80 | ℃/W |
Electrical Characteristics（Tc= 25℃ unless otherwise specified）：
OFF Characteristics |
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Symbol | Parameter | Test Conditions | Rating | Units |
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| Min. | Typ. | Max. |
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VDSS | Drain to Source Breakdown Voltage | VGS=0V,ID=250µA | 800 | -- | -- | V |
IDSS | Drain to Source Leakage Current | VDS=800V,VGS=0V,Ta= 25℃ | -- | -- | 1.0 | µA |
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| VDS=640V,VGS=0V,Ta=150℃ | -- | -- | 100 |
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IGSS(F) | Gate to Source Forward Leakage | VGS =+30V | -- | -- | 100 | nA |
IGSS(R) | Gate to Source Reverse Leakage | VGS =-30V | -- | -- | -100 | nA |
ON Characteristics |
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Symbol | Parameter | Test Conditions | Rating | Units |
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| Min. | Typ. | Max. |
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RDS(ON)a3 | Drain-to-Source On-Resistance | VGS=10V,ID=9A | -- | 0.21 | 0.26 | Ω |
VGS(TH) | Gate Threshold Voltage | VDS=VGS, ID=250µA | 2.5 | -- | 4.5 | V |
Dynamic Characteristics |
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Symbol | Parameter | Test Conditions | Rating | Units |
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| Min. | Typ. | Max. |
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gfsa3 | Forward Transconductance | VDS=40V, ID=18A | -- | 19 | -- | S |
Ciss | Input Capacitance | VGS=0V,VD=25V f=100kHz | -- | 1320 | -- | pF |
Coss | Output Capacitance |
| -- | 380 | -- |
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Crss | Reverse Transfer Capacitance |
| -- | 22 | -- |
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Resistive Switching Characteristics |
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Symbol | Parameter | Test Conditions | Rating | Units |
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| Min. | Typ. | Max. |
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td(ON) | Turn-on Delay Time | VDD=400V,ID=10A, VGS=10V Rg=25Ω | -- | 40 | -- | ns |
tr | Rise Time |
| -- | 21 | -- |
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td(OFF) | Turn-Off Delay Time |
| -- | 140 | -- |
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tf | Fall Time |
| -- | 21 | -- |
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Qg | Total Gate Charge | ID =10A,VDD=450V VGS=0 to 10V | -- | 28 | -- | nC |
Qgs | Gate to Source Charge |
| -- | 6.5 | -- |
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Qgd | Gate to Drain (“Miller”)Charge |
| -- | 11.5 | -- |
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Source-Drain Diode Characteristics |
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Symbol | Parameter | Test Conditions | Rating | Units |
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| Min. | Typ. | Max. |
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IS | Continuous Source Current (Body Diode) |
| -- | -- | 18.4 | A |
ISM | Maximum Pulsed Current (Body Diode) |
| -- | -- | 73.6 | A |
VSD | Diode Forward Voltage | IS=18.4A,VGS=0V | -- | -- | 1.2 | V |
trr | Reverse Recovery Time | VR=4800V, VGS=0V IS=18.4A,di/dt=100A/us | -- | 500 | -- | ns |
Qrr | Reverse Recovery Charge |
| -- | 6.0 | -- | uC |
Pulse width tp≤380µs,δ≤2% |
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a1：Repetitive rating; pulse width limited by maximum junction temperature
a2：IAS=18.5A,VDD=50V,RG=25Ω, Starting TJ= 25°C
a3：Pulse Test: Pulse width≤380us, Duty Cycle≤2%
Typical Characteristics
Company：Wuxi Guang Lei electronic technology co., LTD
TEL：13912355536 Mr.tang
