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GL3424-89
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GL3424-89

Vdss     30 V
Package     SOT-89
Id     7 A
Rdson(typ)     15 mΩ
Rdson(max)     22 mΩ
产品详情


General Description:

The GL3424-89 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. The package form is SOT-89 which accords with the RoHS standard.



Features:

Fast Switching

Low Gate Charge and Rdson

Low Reverse transfer capacitances

100% Single Pulse avalanche energy Test



Applications:

PWM applications

Load switch

Power management


Absolute(Tc= 25℃ unless otherwise specified):


Symbol
Parameter
Rating
Units
VDSS
Drain-to-Source Voltage
30
V
ID
Continuous Drain Current
7
A

Continuous Drain Current TC = 70 °C
5
A
IDMa1
Pulsed Drain Current
28
A
VGS
Gate-to-Source Voltage
±20
V
dv/dt a3
Peak Diode Recovery dv/dt
5.0
V/ns
PD
Power Dissipation
4.0
W
TJTstg
Operating Junction and Storage Temperature Range
15055 to 150
TL
Maximum Temperature for Soldering
300






Electrical Characteristics(Tc= 25℃ unless otherwise specified):


OFF Characteristics






Symbol
Parameter
Test Conditions
Rating
Units





Min.
Typ.
Max.

VDSS
Drain to Source Breakdown Voltage
VGS=0V, ID=-250µA
30
--
--
V
ΔBVDSS/ΔTJ
Bvdss Temperature Coefficient
ID=-250uA,Reference25
--
0.1
--
V/
IDSS
Drain to Source Leakage Current
VDS=30,VGS=0V,Ta=25
--
--
1
µA


VDS=24V,VGS=0V,Ta=125
--
--
250

IGSS(F)
Gate to Source Forward Leakage
VGS=+12V
--
--
1
µA
IGSS(R)
Gate to Source Reverse Leakage
VGS=-12V
--
--
-1
µA




ON Characteristics






Symbol
Parameter
Test Conditions
Rating
Units





Min.
Typ.
Max.

RDS(ON)
Drain-to-Source On-Resistance
VGS=10V,ID=3.0A
--
15
22
m
RDS(ON)
Drain-to-Source On-Resistance
VGS=4.5V,ID=3.0A
--
19
28
mΩ
VGS(TH)
Gate Threshold Voltage
VDS = VGS, ID = 250µA
0.5
0.75
1.5
V
Pulse width tp380µs,δ≤2%









Dynamic Characteristics






Symbol
Parameter
Test Conditions
Rating
Units





Min.
Typ.
Max.

gfs
Forward Transconductance
VDS=15V,ID =6.0A
23
--
--
S
Ciss
Input Capacitance
VGS=0V,VDS=10V
f=1.0MHz
--
620
--
pF
Coss
Output Capacitance

--
130
--

Crss
Reverse Transfer Capacitance

--
50
--




Resistive Switching Characteristics






Symbol
Parameter
Test Conditions
Rating
Units





Min.
Typ.
Max.

td(ON)
Turn-on Delay Time
ID=1.0A,VDD=15V
VGS=10V,RG=6.0
--
7
--
ns
tr
Rise Time

--
21
--

td(OFF)
Turn-Off Delay Time

--
27
--

tf
Fall Time

--
7
--

Qg
Total Gate Charge
ID=6.0A,VDD =15V
VGS=10V
--
10
--
nC
Qgs
Gate to Source Charge

--
2.0
--

Qgd
Gate to Drain (Miller)Charge

--
2.8
--







Source-Drain Diode Characteristics






Symbol
Parameter
Test Conditions
Rating
Units





Min.
Typ.
Max.

IS
Continuous Source Current (Body Diode)

--
--
7.0
A
ISM
Maximum Pulsed Current (Body Diode)

--
--
28
A
VSD
Diode Forward Voltage
IS=7.0A,VGS=0V
--
--
1.5
V
trr
Reverse Recovery Time
IS=7.0A,Tj = 25°C
dIF/dt=100A/us,VGS=0V
--
50
--
ns
Qrr
Reverse Recovery Charge

--
120
--
nC
Pulse width tp380µs,δ≤2%








Symbol
Parameter
Typ.
Units
RθJA
Junction-to-Ambient
138
℃/W


a1:Repetitive rating; pulse width limited by maximum junction temperature

a3ISD =7.0A,di/dt ≤100A/us,VDDBVDS, Start TJ=25








CompanyWuxi Guang Lei electronic technology co., LTD

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