光磊电子科技有限公司
Guanglei Electronic Technology Co., Ltd.
分立器件 功率器件 高可靠供应商
咨询热线:0510-8513 3188
咨询热线:0510-8513 3188
                13912355536
更多热卖
Products
自由容器
QQ咨询:
CONTACT
咨询热线:
0510-85133188
地址:
无锡市新吴区清源路20号大学科技园立业楼E-207
更多热卖
GL3N80A8
分享到:

GL3N80A8

Vdss     800 V
Package     TO-220
Id     3.0 A
Rdson(typ)     4.0 Ω
Rdson(max)     4.8 Ω
产品详情




General Description:

GL3N80A8, the silicon N-channel Enhanced VDMOSFET, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220, which accords with the RoHS standard.



Features

Fast Switching

Low ON Resistance(Rdson≤4.8Ω)

Low Gate Charge (Typical Data: 18nC)

Low Reverse transfer capacitances(Typical: 7pF)

100% Single Pulse avalanche energy Test



Applications:

Power switch circuit of adaptor and charger


AbsoluteTc=25 unless otherwise specified):


Symbol
Parameter
Rating
Units
VDSS
Drain-to-Source Voltage
800
V
ID
Continuous Drain Current
3
A

Continuous Drain Current TC=100 °C
1.9
A
IDMa1
Pulsed Drain Current
12
A
VGS
Gate-to-Source Voltage
±30
V
EAsa2
Single Pulse Avalanche Energy
120
mJ
EAra1
Avalanche Energy ,Repetitive
12
mJ
IAR a1
Avalanche Current
1.5
A
dv/dta3
Peak Diode Recovery dv/dt
5.0
V/ns
PD
Power Dissipation
75
W

Derating Factor above 25°C
0.6
W/
TJTstg
Operating Junction and Storage Temperature Range
15055 to 150
TL
MaximumTemperature for Soldering
300


Caution Stresses greater than those in the Absolute Maximum Ratings may cause permanent damage to the device



Thermal Characteristics


Symbol
Parameter
Rating
Units
RθJC
Thermal Resistance, Junction-to-Case
1.67
℃/ W
RθJA
Thermal Resistance, Junction-to-Ambient
62
℃/ W


Electrical CharacteristicsTc= 25 unless otherwise specified):


OFF Characteristics






Symbol
Parameter
Test Conditions
Rating
Units





Min.
Typ.
Max.

VDSS
Drain to Source Breakdown Voltage
VGS=0V,ID=250µA
800
--
--
V
ΔBVDSS/ΔTJ
Bvdss Temperature Coefficient
ID=250uA,Reference25
--
0.61
--
V/℃
IDSS
Drain to Source Leakage Current
VDS=600V, VGS=0V,Ta=25
--
--
25
µA


VDS=640V, VGS=0V,Ta=125
--
--
250

IGSS(F)
Gate to Source Forward Leakage
VGS=+30V
--
--
100
nA
IGSS(R)
Gate to Source Reverse Leakage
VGS=-30V
--
--
-100
nA




ON Characteristics






Symbol
Parameter
Test Conditions
Rating
Units





Min.
Typ.
Max.

RDS(ON)
Drain-to-Source On-Resistance
VGS=10V,ID=1.5A
--
4.0
4.8
VGS(TH)
Gate Threshold Voltage
VDS=VGS,ID=250µA
2.0
--
4.0
V
gfs
Forward Trans conductance
VDS=15V,ID=1.5A
--
5.5
--
S
Pulse width<380μs; duty cycle<2%.









Dynamic Characteristics






Symbol
Parameter
Test Conditions
Rating
Units





Min.
Typ.
Max.

Ciss
Input Capacitance
VGS=0V VDS=25V
f=1.0MHz
--
660
--
pF
Coss
Output Capacitance

--
50
--

Crss
Reverse Transfer Capacitance

--
7.0
--




Resistive Switching Characteristics






Symbol
Parameter
Test Conditions
Rating
Units





Min.
Typ.
Max.

td(ON)
Turn-on Delay Time
ID=3A,VDD=400V
VGS=10V,Rg=12
--
16
--
ns
tr
Rise Time

--
15
--

td(OFF)
Turn-Off Delay Time

--
40
--

tf
Fall Time

--
20
--

Qg
Total Gate Charge
ID=3A,VDD=400V
VGS=10V
--
18
--
nC
Qgs
Gate to Source Charge

--
5
--

Qgd
Gate to Drain (Miller)Charge

--
8
--




Source-Drain Diode Characteristics






Symbol
Parameter
Test Conditions
Rating
Units





Min.
Typ.
Max.

ISD
Continuous Source Current (Body Diode)

--
--
3
A
ISM
Maximum Pulsed Current (Body Diode)

--
--
12
A
VSD
Diode Forward Voltage
IS=3A,VGS=0V
--
--
1.5
V
trr
Reverse Recovery Time
IS=3A,Tj=25
dIF/dt=100A/μs,VGS=0V
--
820
--
ns
Qrr
Reverse Recovery Charge

--
6.06
--
uC


a1Repetitive rating; pulse width limited by maximum junction temperature

a2L=10mH, ID=4.9A, Start TJ=25

a3ISD=3A,di/dt 100A/us,VDDBVDS, Start TJ=25


Characteristics Curve


CompanyWuxi Guang Lei electronic technology co., LTD

TEL13961734102Mr.yuan


地址:无锡市新吴区清源路20号大学科技园立业楼E-207
电话:0510-85133188
传真:0510-85133188
邮箱:zuotangyun@163.com
技术支持:乐识通
QQ:1741095090
光磊电子科技有限公司