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GL2N65A4
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GL2N65A4

Vdss     650 V
Package      TO-252
Id      2 A
Rdson(typ)     3.8 Ω
产品详情



General Description:

GL2N65A4 the silicon N-channel Enhanced VDMOSFETS, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-252, which accords with the RoHS standard.




Features:

Fast Switching

Low Gate Charge and Rdson

Low Reverse transfer capacitances

100% Single Pulse avalanche energy Test




Applications:

Power switch circuit of adaptor and charger.



AbsoluteTc=25℃ unless otherwise specified)


Symbol
Parameter
Rating
Units
VDSS
Drain-to-Source Voltage
650
V
ID
Continuous Drain Current
2.0
A

Continuous Drain Current TC = 100 °C
1.45
A
IDMa1
Pulsed Drain Current
8.0
A
VGS
Gate-to-Source Voltage
±30
V
EAS a2
Single Pulse Avalanche Energy
68
mJ
EAR a1
Avalanche Energy ,Repetitive
6.4
mJ
IAR a1
Avalanche Current
1.1
A
dv/dt a3
Peak Diode Recovery dv/dt
5.0
V/ns
PD
Power Dissipation
35
W

Derating Factor above 25°C
0.28
W/
TJTstg
Operating Junction and Storage Temperature Range
15055 to 150
TL
Maximum Temperature for Soldering
300




Electrical CharacteristicsTc=25℃ unless otherwise specified)


OFF Characteristics






Symbol
Parameter
Test Conditions
Rating
Units





Min.
Typ.
Max.

VDSS
Drain to Source Breakdown Voltage
VGS=0V, ID=250µA
650
--
--
V
ΔBVDSS/ΔTJ
Bvdss Temperature Coefficient
ID=250uA,Reference25
--
0.60
--
V/
IDSS
Drain to Source Leakage Current
VDS=650V,VGS=0V,Ta=25
--
--
1
µA


VDS=520V,VGS=0V,Ta=125
--
--
100

IGSS(F)
Gate to Source Forward Leakage
VGS=+30V
--
--
100
nA
IGSS(R)
Gate to Source Reverse Leakage
VGS=-30V
--
--
-100
nA




ON Characteristics






Symbol
Parameter
Test Conditions
Rating
Units





Min.
Typ.
Max.

RDS(ON)
Drain-to-Source On-Resistance
VGS=10V,ID=1.0A
--
3.8
4.8
VGS(TH)
Gate Threshold Voltage
VDS=VGS,ID=250µA
2.0
--
4.0
V
Pulse width tp380µs,δ≤2%









Dynamic Characteristics






Symbol
Parameter
Test Conditions
Rating
Units





Min.
Typ.
Max.

gfs
Forward Transconductance
VDS=15V,ID=2A
--
2.6
--
S
Ciss
Input Capacitance
VGS=0V,VDS=25V
f=1.0MHz
--
290
--
pF
Coss
Output Capacitance

--
31
--

Crss
Reverse Transfer Capacitance

--
6
--




Resistive Switching Characteristics






Symbol
Parameter
Test Conditions
Rating
Units





Min.
Typ.
Max.

td(ON)
Turn-on Delay Time
ID=2.0A,VDD=325V
VGS=10V,RG=9.1
--
8
--
ns
tr
Rise Time

--
6
--

td(OFF)
Turn-Off Delay Time

--
30
--

tf
Fall Time

--
11
--

Qg
Total Gate Charge
ID =2.0A,VDD=325V
VGS=10V
--
9
--
nC
Qgs
Gate to Source Charge

--
1.5
--

Qgd
Gate to Drain (Miller)Charge

--
4.0
--





Source-Drain Diode Characteristics






Symbol
Parameter
Test Conditions
Rating
Units





Min.
Typ.
Max.

IS
Continuous Source Current (Body Diode)

--
--
2
A
ISM
Maximum Pulsed Current (Body Diode)

--
--
8
A
VSD
Diode Forward Voltage
IS=2.0A,VGS=0V
--
--
1.5
V
trr
Reverse Recovery Time
IS=2.0A,Tj=25°C
dIF/dt=100A/us,VGS=0V
--
425
--
ns
Qrr
Reverse Recovery Charge

--
1140
--
nC
Pulse width tp380µs,δ≤2%









Symbol
Parameter
Typ.
Units
RθJC
Junction-to-Case
3.57
℃/W
RθJA
Junction-to-Ambient
62
℃/W


a1:Repetitive rating; pulse width limited by maximum junction temperature

a2L=10.0mH, ID=3.7A, Start TJ=25

a3ISD =2A, di/dt≤100A/us, VDDBVDS, Start TJ=25


CompanyWuxi Guang Lei electronic technology co., LTD

TEL:13961734102   Mr.yuan


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